Spatially uniform single-qubit gate operations with near-field microwaves and composite pulse compensation

We present a microfabricated surface-electrode ion trap with a pair of integrated waveguides that generate a standing microwave field resonant with the 171Yb hyperfine qubit. The waveguides are engineered to position the wave antinode near the center of the trap, resulting in maximum field amplitude and uniformity along the trap axis. By calibrating the relative amplitudes and phases of the waveguide currents, we can control the polarization of the microwave field to reduce off-resonant coupling to undesired Zeeman sublevels. We demonstrate single-qubit π -rotations as fast as 1μs with less than 6% variation in Rabi frequency over an 800μm microwave interaction region. Fully compensating pulse sequences further improve the uniformity of X -gates across this interaction region. 5 Author to whom any correspondence should be addressed. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. New Journal of Physics 15 (2013) 083053 1367-2630/13/083053+12$33.00 © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft